Sr Engineer, Adv DRAM PI

Micron Technology, Inc.
Boise, ID, United States
about 1 month ago
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Role details

Contract type
Permanent contract
Employment type
Full-time (> 32 hours)
Experience level
Expert
Experience required
10 years minimum
Working hours
Regular working hours

Tech stack

Dynamic Random-Access Memory Storage Devices Yield Optimization

Job description

  • Lead technology integration activities to enable brand new layered memory devices, focusing on components like charge storage devices and thin-film transistors (TFTs).
  • Develop and integrate new device architectures, moving concepts from paper through to silicon productization.
  • Optimize process flows and implement creative solutions to meet complex product performance and reliability requirements.
  • Build and complete experiments in the R&D fab by collaborating with multi-functional teams, including build, yield improvement, and probe.
  • Analyze inline, defect, and parametric data to evaluate failure mechanisms and drive continuous yield improvement.
  • Communicate complex technical findings and actionable solutions to both technical and non-technical audiences.

Requirements

  • MS or PhD in Physics, Materials Science, Electrical Engineering, or a related technical field.
  • 10+ years of relevant industry experience in semiconductor process integration or advanced node development.
  • Strong functional knowledge of semiconductor device physics and meticulous experiment design (DOE).
  • Proven experience driving multi-functional technical teams and managing complex projects., * Detailed knowledge of mainstream memory technologies (DRAM, NAND) and alternative memory challenges.
  • Familiarity with circuit and architecture issues as they relate to advanced memory scaling.
  • Experience in technology pathfinding or R&D environments focusing on non-conventional architectures.

About the company

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

We are part of Micron’s Technology Development organization, where advanced ideas become manufacturable technologies. You will join a world-class team in our industry-leading R&D facility, focusing on novel solutions for scaling, performance, and power in next-generation layered memory technology.

This role bridges the gap between device physics and materials science to define the future of memory technology. This is a place for curiosity, experimentation, and real impact as we build solutions for everything from virtual reality to breakthroughs in artificial intelligence., Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards.

Micron does not charge candidates any recruitment fees or unlawfully collect any other payment from candidates as consideration for their employment with Micron.

AI alert: Candidates are encouraged to use AI tools to enhance their resume and/or application materials. However, all information provided must be accurate and reflect the candidate’s true skills and experiences. Misuse of AI to fabricate or misrepresent qualifications will result in immediate disqualification.

Fraud alert: Micron advises job seekers to be cautious of unsolicited job offers and to verify the authenticity of any communication claiming to be from Micron by checking the official Micron careers website in the About Micron Technology, Inc.

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