Transistor Reliability and Quality Engineer

Intel is seeking a highly motivated and talented Transistor Quality and Reliability Engineer to join our Technology Development Quality and Reliability Engineering team. In this role, you will work at the cutting edge of transistor technology development, ensuring the highest levels of quality and reliability for Intel’s next-generation process technologies.

You will collaborate closely with cross-functional teams including Process Integration, Device Engineering, Yield Engineering, and Product teams to drive quality and reliability excellence from early technology development through technology qualification and high-volume manufacturing readiness.

Responsibilities

• Drive transistor reliability characterization and certification activities including but not limited to: Hot Carrier Injection (HCI), Bias Temperature Instability (NBTI/PBTI), Time Dependent Dielectric Breakdown (TDDB)
• Collaborate with process integration and device engineering teams to develop a high volume manufacturable technology that meets yield, performance and reliability requirements.
• Develop FMEA for novel transistor structures and materials
• Define and implement reliability monitors and early warning indicators for technologies
• Drive continuous improvement in reliability methodologies, test structures, and characterization techniques
• Develop physics-based and empirical reliability models for transistor wear-out and degradation mechanisms including:
• Lifetime prediction
• Statistical distribution modeling (Weibull, lognormal)
• SPICE-compatible reliability model development for circuit design enablement
• Design reliability test structures and test-chip layouts to enable:
• Systematic reliability characterization
• Early detection of reliability and quality risks
• Collaboration with layout and design teams to tape-in test-structures and influence design for reliability for partner organizations
• Develop and improve automation framework for data analysis to enable:
• Systematic reliability characterization from a high volume of data across multi variable process modulators

• Bachelor’s degree in Electrical Engineering, Materials Science, Physics, or a related field with 6+ years of industry experience OR a Master’s degree in the above fields with 4+ years of experience OR a Ph.D. with 2+ years of experience., * Hands-on experience in semiconductor device fabrication, process characterization, and experimental design.
• Proficiency in statistical analysis and data interpretation using tools such as JMP, R, SAS, or Python.
• Strong technical background in semiconductor device physics and reliability mechanisms.
• Knowledge of process integration and technology development methodologies., * Experience in semiconductor reliability engineering and technology qualification frameworks.
• Familiarity with advanced CMOS process integration and transistor reliability mechanisms (e.g., HTOL, ELFR, TDDB).
• Proficiency in statistical quality systems, process capability analysis, and defect reliability modeling.
• Background in data analytics, machine learning, and AI-assisted engineering workflows.
• Expertise in semiconductor failure analysis, fabrication, and physical characterization techniques.
• Experience with automation and scripting tools such as SQL and Python.

We’re looking for exceptional candidates eager to make a lasting impact on Intel’s innovation journey. If you’re ready to advance groundbreaking technologies and thrive in a collaborative, dynamic environment, we encourage you to take the next step and apply today.

We offer a total compensation package that ranks among the best in the industry. It consists of competitive pay, stock bonuses, and benefit programs which include health, retirement, and vacation. Find out more about the benefits of working at Intel (https://intel.wd1.myworkdayjobs.com/External/page/1025c144664a100150b4b1665c750003) .

Annual Salary Range for jobs which could be performed in the US: $155,520.00-219,550.00 USD