Sr. ASIC RTL Design Engineer, Memory Controller

Tesla Motors
Austin, TX, United States
2 days ago
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Role details

Contract type
Permanent contract
Employment type
Full-time (> 32 hours)
Experience level
Expert
Experience required
5 years minimum
Working hours
Regular working hours

Tech stack

Artificial Intelligence Computer Engineering Microarchitecture Software Debugging Dynamic Random-Access Memory Perl (Programming Language) Firmware Field-Programmable Gate Array (FPGA) Python (Programming Language) SystemVerilog Tcl (Programming Language) Verilog
+4 more
Scripting Application Specific Integrated Circuits State Machines Physical Design

Job description

You will define micro-architecture, write production RTL, close PPA, and debug silicon for LPDDR, GDDR, and/or HBM controllers on Tesla’s next-generation ASICs. The work ships in cars, robots, and our training cluster. What You’ll Do

  • Own memory controller micro-architecture and RTL from spec through tape-out and silicon bring-up
  • Implement JEDEC-compliant controller logic for current DRAM generations: LPDDR5X / LPDDR6, GDDR7, and/or HBM4E
  • Design axi/CHI interface, command scheduling, bank/rank/channel arbitration, QoS, refresh, power-state machines, and read/write turnaround under mixed AI, and real-time traffic
  • Own the DFI (or equivalent) controller-PHY interface, including training, calibration, and PHY timing constraints
  • Drive bandwidth, latency, power, and area with data - not guesswork. Close the loop through synthesis, STA, and silicon measurements
  • Deliver synthesis-ready SystemVerilog that passes lint, CDC/RDC, DFT, and low-power (UPF) checks. Partner with physical design on floorplan, congestion, and timing
  • Work with architecture, PHY, verification, firmware, and post-silicon teams to close protocol, performance, and reliability issues
  • Support FPGA/emulation, first-silicon bring-up, and production debug of the memory interface
  • Write micro-architecture specs and timing documentation that other teams can execute against
  • Help define Tesla’s next-generation controllers for LPDDR6, GDDR7, and HBM4, including ECC, RAS, and automotive-grade reliability

Requirements

  • Degree in Electrical Engineering, Computer Engineering, or equivalent experience
  • 5+ years of RTL design on complex digital IP, with direct ownership of a memory controller or high-speed memory/interface controller
  • Hands-on design experience with at least one current DRAM technology, and working knowledge of the others: LPDDR5 / LPDDR5X (LPDDR6 preferred); GDDR6 / GDDR6X (GDDR7 preferred); HBM2E / HBM3 / HBM3E (HBM4 preferred)
  • Deep understanding of DRAM internals: banks, ranks, channels, row/column timing (tRCD, tRP, tRAS, tRFC, tCCD, tWTR, tRTW), refresh, and page policy
  • Proven scheduler/arbitration and QoS work under high-bandwidth, many-outstanding, mixed-priority traffic
  • Proficiency in SystemVerilog/Verilog and scripting (Python, Perl, or Tcl)
  • Experience with AMBA host interfaces (AXI, ACE, CHI) or equivalent SoC fabrics
  • Experience with synthesis, STA, CDC, lint, and low-power design
  • Strong waveform-level debug in simulation, emulation, or silicon

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