Staff Memory Design Engineer, HBM

The Staff Design Engineer is responsible for designing, simulating, and optimizing DRAM circuits while supporting the development of digital and analog circuitry used in advanced memory products. This role collaborates globally across design, verification, product engineering, test, probe, process integration, assembly, and marketing to ensure manufacturable, high-quality, cost-optimized solutions. The position drives innovation in future memory generations and contributes to silicon-to-system development in a dynamic engineering environment., * Design digital, analog, and memory core circuits using CMOS logic and transistors, implementing device specifications from concept to solution.

• Utilize AI-Enabled tools to assist with schematic editing, data collection and layout floorplan.
• Create optimized floorplans for circuit placement, routing, power delivery, sense margins, array timing, and die size, including layout leadership.
• Conduct circuit simulations using FINESIM, HSPICE, and VERILOG; analyze power, performance, reliability, and parasitic impacts.
• Validate builds through reticle experiments, tape-out revisions, and simulation-to-silicon correlation, identifying required schematic edits.
• Prepare and maintain design documentation while contributing to best-known practices and departmental training.
• Collaborate with global build, verification, product engineering, test, probe, process integration, assembly, and marketing teams to ensure manufacturability and quality.
• Manage layout and develop resources, track project tasks, and serve as the point of contact for design, layout, verification, and test issues.
• Prepare project status reports and lead design reviews to communicate progress and technical decisions.

• Coursework in CMOS Circuit Design, VLSI, and Analog Circuit Design, with understanding of device reliability and circuit floor planning.
• Proficiency with Cadence Virtuoso, and experience simulating with FINESIM, HSPICE, and VERILOG.
• Strong analytical and problem-solving skills with proven significant technical contributions and a record of innovation.
• Expertise in DRAM subsystem architecture, specification, operation, or design, including cross-department technical leadership experience.
• Ability to proactively collaborate across multiple engineering organizations to optimize manufacturing quality, cost, reliability, and time-to-market.

Preferred Qualifications

• Self-motivated with strong problem-solving abilities and a drive to discover new solutions.
• Deep knowledge of industry-specific technologies and competitive trends.
• Excellent communication and interpersonal skills for cross-functional collaboration.
• BS or MS in Electrical Engineering or related field plus 6 years of experience in DRAM design, product, or system.

Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards.